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Titlebook: Scanning Electron Microscopy; Physics of Image For Ludwig Reimer Book 19851st edition Springer-Verlag Berlin Heidelberg 1985 Rasterelektron

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31#
發(fā)表于 2025-3-26 23:32:45 | 只看該作者
0342-4111 Chap. 2 in order to show how an electron probe of small diameter can be formed, how the elec- tron beam can be blanked at high frequencies for time-resolving exper- iments and what problems have tobe taken into account when focusing.978-3-662-13562-4Series ISSN 0342-4111 Series E-ISSN 1556-1534
32#
發(fā)表于 2025-3-27 05:05:38 | 只看該作者
Introduction, a voltage of 1–50 kV between cathode and anode. The smallest beam cross-section at the gun — the crossover — with a diameter of the order of 10–50 gm for thermionic and 10–100 nm for field-emission guns, is demagnified by a two-or three-stage electron lens system, so that an electron probe of diame
33#
發(fā)表于 2025-3-27 06:01:36 | 只看該作者
34#
發(fā)表于 2025-3-27 09:48:22 | 只看該作者
Electron Scattering and Diffusion,tion or leave the specimen as backscattered electrons. Elastic large-angle scattering differs considerably from that characterized by the widely used Rutherford cross-sections and Mott cross-sections have to be used for more accurate calculations. The ionisation cross-section of inner shells is impo
35#
發(fā)表于 2025-3-27 15:23:57 | 只看該作者
36#
發(fā)表于 2025-3-27 20:41:11 | 只看該作者
Detectors and Signal Processing,r. Electrons are collected by a positively biased grid in front of a scintillator biased at +10kV. The light emission is recorded by a photomultiplier tube. Scintillation detectors can also be used for backscattered electrons (BSE) when the solid angle of collection is increased. Other alternatives
37#
發(fā)表于 2025-3-28 01:07:00 | 只看該作者
Imaging with Secondary and Backscattered Electrons,rface. A fraction of the SE signal is excited by the primary electron probe and carries high-resolution information due to the small exit depth of the SE. Another fraction of poorer resolution is excited by the BSE. If, instead of using the conventional SE detector, the SE are sorted according to th
38#
發(fā)表于 2025-3-28 05:12:55 | 只看該作者
Electron-Beam-Induced Current, Cathodoluminescence and Special Techniques,ring semiconductor-device parameters such as the diffusion length, the surface recombination velocity, the relaxation time, and the position and width of depletion layers by recording the charge-collection current or electron-beaminduced current in a depletion layer. Schottky barriers as well as dif
39#
發(fā)表于 2025-3-28 07:03:27 | 只看該作者
40#
發(fā)表于 2025-3-28 12:17:32 | 只看該作者
Elemental Analysis and Imaging with X-Rays,e of known concentration are counted. The concentration of the element in the specimen can be calculated from the ratio of these counts. However, several corrections are necessary since various factors are different for specimen and standard: the backscattering and the stopping power, which depend o
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