Titlebook: Electron Beam Testing Technology; John T. L. Thong Book 1993 Springer Science+Business Media New York 1993 Signal.electron optics.integrat

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Industrial Case Studiesn IC developer and includes a number of examples where EBT was used for chip verification and failure analysis at various stages of an IC’s life. Because an IC user does not have access to the design information and in attempting to perform failure analysis is faced with the task of working from a r

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https://doi.org/10.1007/978-3-662-48417-3a corollary of the fact that scanning electron beam instruments are widely used to delineate device features at one stage or another in the IC manufacturing process, such as during mask making or direct-write electron beam lithography.

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Voronoi-Based Spatial Representations,nctioning of the circuit. However an electron probe can also be used to influence circuit behavior by injecting a charge or creating electron-hole pairs in semiconductors. This mode of operation can play a role in testing that is complementary to noninvasive observation by providing the means of controlling a circuit.

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https://doi.org/10.1007/978-3-662-03830-7y emission noise. Further systematic errors caused by local fields, material contrast, contamination, and specimen charging are also discussed. The final section compares different electron spectrometers, covering several aspects of the spectrometer constant in detail.

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https://doi.org/10.1007/978-3-642-00222-9aneously. In addition, it is desirable to have a diagnostic technique that is applicable to all semiconductor technologies rather than being limited to exclusively silicon- (Si) or gallium-arsenide- (GaAs) based circuitry.

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Introductiona corollary of the fact that scanning electron beam instruments are widely used to delineate device features at one stage or another in the IC manufacturing process, such as during mask making or direct-write electron beam lithography.

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Electron Spectrometers and Voltage Measurementsy emission noise. Further systematic errors caused by local fields, material contrast, contamination, and specimen charging are also discussed. The final section compares different electron spectrometers, covering several aspects of the spectrometer constant in detail.

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