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Titlebook: Crystal Growth; Theory and Technique C. H. L. Goodman Book 1974 Springer Science+Business Media New York 1974 corrosion.crystal.fields.grow

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發(fā)表于 2025-3-23 10:10:15 | 只看該作者
Jan-Olov Str?mberg,Alberto Torchinskyost widely used technique for semiconductors. It consists of oriented crystal growth of a material transported from the gas phase onto a suitable solid substrate. Strictly speaking, vapour phase growth should refer to growth due to condensation of the material from its own vapours, as in an evaporat
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發(fā)表于 2025-3-24 13:58:40 | 只看該作者
larly in the field of ‘electronics‘). The range of fields involved is great: from electro-optics to metal corrosion, from semiconductors to magnetic bubble materials-one can add to the list almost indefinitely. However, while the general principles of crystal growth can be applied aImost right acros
18#
發(fā)表于 2025-3-24 14:50:23 | 只看該作者
Book 1974he field of ‘electronics‘). The range of fields involved is great: from electro-optics to metal corrosion, from semiconductors to magnetic bubble materials-one can add to the list almost indefinitely. However, while the general principles of crystal growth can be applied aImost right across the boar
19#
發(fā)表于 2025-3-24 22:07:23 | 只看該作者
Mechanisms in Vapour Epitaxy of Semiconductors,ost widely used technique for semiconductors. It consists of oriented crystal growth of a material transported from the gas phase onto a suitable solid substrate. Strictly speaking, vapour phase growth should refer to growth due to condensation of the material from its own vapours, as in an evaporat
20#
發(fā)表于 2025-3-25 01:13:02 | 只看該作者
Travelling Solvent Techniques,lted on account of phase transformations or decomposition. There are two main variants, based on (1) the use of a stationary temperature gradient across a thin solvent zone, and (2) the enforced migration of a thick solvent zone by means of an externally moved heating element. While the first, the t
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