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Titlebook: Crystal Growth; Theory and Technique C. H. L. Goodman Book 1974 Springer Science+Business Media New York 1974 corrosion.crystal.fields.grow

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書目名稱Crystal Growth
副標(biāo)題Theory and Technique
編輯C. H. L. Goodman
視頻videohttp://file.papertrans.cn/241/240633/240633.mp4
圖書封面Titlebook: Crystal Growth; Theory and Technique C. H. L. Goodman Book 1974 Springer Science+Business Media New York 1974 corrosion.crystal.fields.grow
描述In the last decade or so the growth of single crystals has assumed enormous importance for both academic research, and technology (particu- larly in the field of ‘electronics‘). The range of fields involved is great: from electro-optics to metal corrosion, from semiconductors to magnetic bubble materials-one can add to the list almost indefinitely. However, while the general principles of crystal growth can be applied aImost right across the board, it turns out that the precise way in which one can grow a particular crystal best varies considerably from material to material. This, of course, is to emphasise the obvious; nonetheless, except in specialised papers in the scientific litera ture , little attempt seems to have been made to deal in any detail with the causes of the difficulties in growing particular kinds of materials and with methods of circumventing them. These specialised papers may be inaccessible, and in any case cannot be, usually, very broad in scope or detailed in treatment simply because of the pressure to keep papers short. And unfortunately few specialised monographs seem to have been produced. These points and others similar emerged repeatedly in discussions w
出版日期Book 1974
關(guān)鍵詞corrosion; crystal; fields; growth; metals; optics; paper; semiconductor
版次1
doihttps://doi.org/10.1007/978-1-4757-1272-8
isbn_softcover978-1-4757-1274-2
isbn_ebook978-1-4757-1272-8
copyrightSpringer Science+Business Media New York 1974
The information of publication is updating

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Mechanisms in Vapour Epitaxy of Semiconductors,e latter case, where a gaseous compound or combination of compounds is transported to the vicinity of the solid surface, at which point a chemical reaction occurs which results in formation and deposition of the semiconductor material. Although such a process is more correctly called gas phase epita
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