Titlebook: Springer Handbook of Crystal Growth; Govindhan Dhanaraj,Kullaiah Byrappa,Michael Dudley Book 2010 Springer-Verlag Berlin Heidelberg 2010 T

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Crystal Growth Techniques and Characterization: An Overview subsequent chapters on fundamentals of growth phenomena, details of growth processes, types of defects, mechanisms of defect formation and distribution, and modeling and characterization tools that are being employed to study as-grown crystals and bring about process improvements for better-quality

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Generation and Propagation of Defects During Crystal Growtholutions, in supercooled melt (mainly low-melting organics) and in the vapor phase. To a?smaller extent growth on rounded faces from the melt is also considered when this seems appropriate to bring out analogies or discuss results in a?more general context. The origins and typical configurations of

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Single Crystals Grown Under Unconstrained Conditions figures), internal morphology (growth sectors, growth banding and associated impurity partitioning) and perfection (dislocations and other lattice defects) in single crystals, we can deduce how and by what mechanism the crystal grew and experienced fluctuation in growth parameters through its growt

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Defect Formation During Crystal Growth from the Meltnetic principles are considered as driving forces of defect generation and incorporation, respectively. Results of modeling and practical in?situ control are presented. Strong emphasis is given to semiconductor crystal growth since it is from this class of materials that most has been first learned,

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Czochralski Silicon Single Crystals for Semiconductor and Solar Cell Applicationsapplied Czochralski growth systems and unidirectional solidification systems are the focus for large-scale integrated (LSI) circuits and solar applications, for which control of melt flow is a key issue to realize high-quality crystals.

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