Titlebook: Semiconductor Modeling Techniques; Naci Balkan,Marie Xavier Book 2012 Springer-Verlag Berlin Heidelberg 2012 modelling vertical cavity dev

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Fundamental Theory of Semiconductor Lasers and SOAs,and cavity resonances. Rate equations are used to elucidate time-dependent laser behaviour and, in combination with a travelling-wave equation for spatial photon distribution, to describe the effects of saturation and crosstalk in SOAs.

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Book 2012ys. The book is aimed primarily at newcomers working in the field of semiconductor physics to give guidance?in theory?and experiment. The theoretical techniques for electronic and optoelectronic devices are explained in detail.

COMA

Theory and Modelling for the Nanoscale: The ,* Tight Binding Approach,. We insist on the method’s ability to account for atomistic symmetries and to treat all the energy scales of electronic structures (from sub-meV quantities such as spin splittings to full-band properties like the optical index) using a single set of material parameters.

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Theory of Electronic Transport in Nanostructures, scale. We then turn to address a range of novel nanoscale transport effects. These include the quantum Hall effect and quantised conductance, as well as the recent prediction and observation of quantised conduction associated with the spin quantum Hall effect in a topological insulator. We next con

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Hot Electron Transport,hapter, the basic concepts of hot electron transport in semiconductors are introduced following a semiclassical approach. Scattering mechanisms pertinent to hot electron transport are described, including phonon, electron–electron and alloy scattering. The high-field phenomena of avalanche breakdown

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Band Structure Engineering of Semiconductor Devices for Optical Telecommunications,e to modify artificially the electronic structure of semiconductor materials. The combination of strain and quantum confinement can in particular lead to great improvements of the semiconductor laser characteristics. This explains that most of the commercial semiconductor lasers and semiconductor op

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Fundamental Theory of Semiconductor Lasers and SOAs,ics of radiative emission, together with the elements of optical waveguide theory, simple approximations are found for optical gain, lasing threshold and cavity resonances. Rate equations are used to elucidate time-dependent laser behaviour and, in combination with a travelling-wave equation for spa

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