| 書目名稱 | Semiconductor Interfaces at the Sub-Nanometer Scale |
| 編輯 | H. W. M. Salemink,M. D. Pashley |
| 視頻video | http://file.papertrans.cn/865/864848/864848.mp4 |
| 叢書名稱 | NATO Science Series E: |
| 圖書封面 |  |
| 描述 | The Advanced Research Workshop on the Physical Properties of Semiconductor Interfaces at the Sub-Nanometer Scale was held from 31 August to 2 September, 1992, in Riva del Garda. Italy. The aim of the workshop was to bring together experts in different aspects of the study of semiconductor interfaces and in small-scale devices where the interface properties can be very significant It was our aim that this would help focus research of the growth and characterization of semiconductor interfaces at the atomic scale on the issues that will have the greatest impact on devices of the future. Some 30 participants from industrial and academic research institutes and from 11 countries contributed to the workshop with papers on their recent wode. . ‘There was ample time for discussion after each talk. as well as a summary discussion at the end of the meeting. The major themes of the meeting are described below. The meeting included several talks relating to the different growth techniques used in heteroepitaxial growth of semiconductors. Horikoshi discussed the atomistic processes involved in MBE, MEE and MOCVD, presenting results of experimental RHEED and photoluminescence measurements; Foxo |
| 出版日期 | Book 1993 |
| 關鍵詞 | Helium-Atom-Streuung; STM; Semiconductor; semiconductors; spectroscopy |
| 版次 | 1 |
| doi | https://doi.org/10.1007/978-94-011-2034-0 |
| isbn_softcover | 978-94-010-4900-9 |
| isbn_ebook | 978-94-011-2034-0Series ISSN 0168-132X |
| issn_series | 0168-132X |
| copyright | Kluwer Academic Publishers 1993 |
|Archiver|手機版|小黑屋|
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