Titlebook: Semi-Insulating III–V Materials; Nottingham 1980 G. J. Rees Book 1980 The individual contributors 1980 alloy.defects.electronic properties.

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Key Electrical Parameters in Semi-Insulating Materials; The Methods to Determine them in GaAsbe compensated by Cr, can be determined. These two parameters have an important influence on the electrical properties of layers obtained by direct implantation in these substrates and subsequent capped annealing. This last treatment reveals basic properties of the starting substrates and completes their characterization.

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The Growth and Properties of Large Semi-Insulating Crystals of Indium Phosphidematerial with a resistivity greater than 10. ohm-cm, which is thermally stable under epitaxial growth conditions. Etch pit densities for large iron-doped crystals fall in the range 2–5 × 10. cm., increasing along the crystal from seed to tail.

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Whither Chromium in Gallium Arsenide?estigative work, progress in understanding has been, until comparatively recently, painfully slow. The reasons for this are examined, setting the scene for consideration of the more exciting developments of the last three or four years.

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Review of Techniques for Epitaxial Growth of High-Resistivity GaAs — Growth Systems, Problems and SuHigher active layer mobilities, especially near the interface, are obtained when buffer layers are used. The buffer layer also serves to isolate the active layer from problems generated at the substrate-epilayer interface and from some of the vagaries associated with semi-insulating substrates..Seve

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