Titlebook: Research on the Radiation Effects and Compact Model of SiGe HBT; Yabin Sun Book 2018 Springer Nature Singapore Pte Ltd. 2018 SiGe HBT.Radi

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Book 2018based on non-linear rational function fitting. It also presents the total dose effects irradiated by gamma rays and heavy ions, as well as the single-event transient induced by pulse laser microbeams. It offers readers essential information on the irradiation effects technique and the SiGe HBTs model using that technique..

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2190-5053 icon-germanium (SiGe) heterojunction bipolar transistors (HBThis book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects,

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Single Event Transients in SiGe HBT,When the high-energy charged particles strike the transistors or circuits, an amount of high-density electron hole pairs are generated, and then single event effects are produced when the electron hole pairs are collected by device terminals.

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