Titlebook: Rare Earth Oxide Thin Films; Growth, Characteriza Marco Fanciulli,Giovanna Scarel Book 2007 Springer-Verlag Berlin Heidelberg 2007 Depositi

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0303-4216 r the development of RE oxides thin films and to evaluate their effectiveness as innovative materials in different applications..978-3-642-07146-1978-3-540-35797-1Series ISSN 0303-4216 Series E-ISSN 1437-0859

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Requirements of Precursors for MOCVDand ALD of Rare Earth Oxides, complexes with reasonable volatility. The chemical requirements of precursors for MOCVD and ALD are outlined, and it is shown that these requirements may be mutually exclusive. Important classes of precursors, including amides, alkoxides, diketonates and organometallics, are surveyed.

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Local Structure, Composition and Electronic Properties of Rare Earth Oxide Thin Films Studied Usingnic properties at the nanometre level of rare earth oxide?(REO) thin films in the context of their potential use as alternative gate dielectrics to SiO.. A?review of the existing work on binary REO and a?preliminary work on atomic layer deposited?(ALD) Lu.O./Si stack as-grown and annealed are proposed.

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Electronic Structure of Rare Earth Oxides,ion. Ce, Pr, and Tb are found to have tetravalent configurations in their dioxides, while for all the sesquioxides the trivalent ground-state configuration is most favourable. Tetravalent NdO. is predicted to exist as a metastable phase – unstable towards the formation of hexagonal Nd.O.. The trends of the band gap structure are discussed.

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Book 2007th semiconducting substrates are discussed. The aim is to identify proper methodologies for the development of RE oxides thin films and to evaluate their effectiveness as innovative materials in different applications..

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