Titlebook: Quantum Dot Devices; Zhiming M. Wang Book 2012 Springer Science+Business Media New York 2012 Colloidal quantum dots, optoelectronic applli

BOLT

Mode-Locked Semiconductor Lasers with Optical Injection,determine the RF linewidth and timing jitter, applicable to high repetition rate PMLLs, through the dependence of modal linewidth on the mode number. Complex electric field measurements show asymmetric pulses with parabolic phase close to threshold, with the appearance of waveform instabilities at h

GRIPE

Catastrophic Optical Damage in Quantum Dot Lasers,e the first lasing action reported in 1994, a rapid advancement in the output power of QD lasers has been achieved. QD lasers with excellent optical power from a few mW to more than 11?W have been reported. As the QD laser output power continues to reach higher levels, problems such as COD which cau

Commonwealth

Preserve

Photonic Crystal Cavity Lasers,e light-matter interaction, increasing the efficiency and modulation rate. We explore the design, fabrication, and characterization of lasers based on photonic crystal (PC) cavities. We first describe the fundamentals of the PC cavity in one dimensional (1D) and two dimensional (2D) settings, and ho

悄悄移動(dòng)

Muffle

Quantum Optical Transistor and Other Devices Based on Nanostructures, quantum optical devices, such as quantum optical transistor, slow light device, fast light device, or light storage device. In contrast to conventional electronic transistor, a quantum optical transistor uses photons as signal carriers rather than electrons, which has a faster and more powerful tra

法律的瑕疵

vanquish

Ultrafast Terahertz Dynamics and Switching in Quantum Dots, ultrafast terahertz (THz) techniques. In the first part of this chapter we describe the studies of carrier capture into the QDs, and thermionic carrier release from the QDs with (sub-)picosecond time resolution, using optical pump–THz probe measurements. In the second part of this chapter we invest

comely

Nonlinear Optics and Saturation Behavior of Quantum Dot Samples Under Continuous Wave Driving, switching, slow light, and self-organization. Theoretical investigations are based on numerical simulations of a spatially and spectrally resolved rate equation model, which takes into account the strong coupling of the quantum dots to the carrier reservoir created by the wetting layer (WL) states.

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Quantum Dots with Built-in Charge for Enhancing Quantum Dot Solar Cells and Infrared Photodetectorsts via intentional or unintentional doping. Monte Carlo simulations demonstrate that photoelectron capture is substantially enhanced in strong fields and electron kinetics can be controlled by potential barriers. Therefore, by creating potential barriers around dots, we found that our novel quantum