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Titlebook: Quantitative Methoden 1; Einführung in die St Bj?rn Rasch,Malte Friese,Ewald Naumann Textbook 20144th edition Springer-Verlag Berlin Heidel

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21#
發(fā)表于 2025-3-25 04:16:49 | 只看該作者
Werner Wenzel,Heinrich Wilhelm Gudenau,Efren Wee,Klaus-Peter Mey subsets of parties can recover the secret from their shares. The family of the predefined authorized subsets is called the access structure. An access structure is ideal if there exists a secret-sharing scheme realizing it in which the shares have optimal length, that is, in which the shares are ta
22#
發(fā)表于 2025-3-25 07:52:02 | 只看該作者
Neck, is on selected aspects of the neck. including discussion on anatomy, evaluation of lymph nodes, utility to identify infections and the use of ultrasound for vascular access. The properly trained clinician in point of care ultrasound should be trained in the fundaments, image acquisition, image inte
23#
發(fā)表于 2025-3-25 12:26:04 | 只看該作者
24#
發(fā)表于 2025-3-25 17:16:41 | 只看該作者
Learning from Conceptions of Professional Responsibility and Graduates Experiences in Becoming Novips a theoretical framework around professional responsibility and positions this within the negotiation of meaning and identity within communities of practice, competing influences of accountability and autonomy. Cognisance is also taken of these dynamic influences within a wider confluence of ‘soci
25#
發(fā)表于 2025-3-25 21:44:50 | 只看該作者
Klinisches Bild und Verlauf bipolarer affektiver St?rungent in der Stimmung angehoben, euphorisch, ekstatisch und/ oder reizbar, verbunden mit Symptomen wie vermehrte Sprachproduktion, Gedankendr?ngen, Ablenkbarkeit, Agitiertheit oder Hyperaktivit?t, vermindertes Schlafbedürfnis, überh?hte Selbsteinsch?tzung und Gr??enideen sowie exzessive Beteiligung an v
26#
發(fā)表于 2025-3-26 04:05:46 | 只看該作者
27#
發(fā)表于 2025-3-26 04:55:43 | 只看該作者
28#
發(fā)表于 2025-3-26 08:53:54 | 只看該作者
29#
發(fā)表于 2025-3-26 14:43:17 | 只看該作者
30#
發(fā)表于 2025-3-26 19:03:37 | 只看該作者
Arbeit und der Blick nach vorne,150?cm./V·s at room temperature for a layer with a carrier density of 3.2?×?10.?cm.. Thus, the intentionally Si-doped homoepitaxial layers grown on β-Ga.O. substrates can be applicable for the production of β-Ga.O.-based power devices.
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