| 書目名稱 | Point Defects in Solids | | 副標(biāo)題 | Volume 2 Semiconduct | | 編輯 | James H. Crawford (Chairman),Lawrence M. Slifkin | | 視頻video | http://file.papertrans.cn/750/749683/749683.mp4 | | 圖書封面 |  | | 描述 | Volume 1 of Point Defects in Solids has as its major emphasis defects in ionic solids. Volume 2 now extends this emphasis to semiconductors. The first four chapters treat in some detail the creation, kinetic behavior, inter- actions, and physical properties of both simple and composite defects in a variety of semiconducting systems. Also included, as in Vol. 1, are chapters on special topics, namely phonon-defect interactions and defects in organic crystals. Defect behavior in semiconductors has been a subject of considerable interest since the discovery some twenty-five years ago that fast neutron irradiation profoundly affected the electrical characteristics of germanium and silicon. Present-day interest has been stimulated by such semiconductor applications as solar cell power plants for space stations and satellites and semiconductor particle and y-ray detectors, since in both radiation damage can cause serious deterioration. Of even greater practical concern is the need to understand particle damage in order to capitalize upon the develop- ing technique of ion implantation as a means of device fabrication. Although the periodic international conferences on radiation effects in | | 出版日期 | Book 1975 | | 關(guān)鍵詞 | Plantation; behavior; cell; crystal; diffusion; dispersion; electron; magnetism; molecular solid; neutron; pla | | 版次 | 1 | | doi | https://doi.org/10.1007/978-1-4684-0904-8 | | isbn_softcover | 978-1-4684-0906-2 | | isbn_ebook | 978-1-4684-0904-8 | | copyright | Plenum Press, New York 1975 |
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