Titlebook: Non-logic Devices in Logic Processes; Yanjun Ma,Edwin Kan Book 2017 Springer International Publishing AG 2017 Device Physics.Logic CMOS.MO

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Multiple-Times Programmable Logic Nonvolatile Memory NVMs are discussed, including medium density eNVM based on two-transistor (2T) memory cell, and low density but also low-power three-transistor (3T) memory cell. In the last section, we review the charge trapping-based NVM cell design.

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Non-Data-Storage Applicationsnalog converters that use floating-gate transistors as analog storage for trimming of current sources. Adaptive floating-gate comparator and several applications are briefly described. RFID systems application is then reviewed where many of the novel devices and circuits, including native devices, b

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CMOS Biosensorssignal transduction from the biological to the electronic domains. As the amperometric sensing on CMOS is similar to most popular mixed-signal designs, we will only focus on field-effect sensors with a polarizable electrode or interface. A general device based on the neuromorphic principles in the p

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Waveform Shaping Structures and Transmission Lines on CMOSnterest (or equivalently the operating frequency is much lower than the speed of light divided by the layout size), and are hence treated as lumped circuit elements or scattering blocks in conventional microwave circuits. These lumped circuits do not need to consider the coupling between the electri

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yield. The author presents an integrated picture of semiconductor device physics and manufacturing techniques, as well as numerous practical examples of device designs that are tried and true.978-3-319-83916-5978-3-319-48339-9

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