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Titlebook: Nanoscale Spectroscopy and Its Applications to Semiconductor Research; Yoshio Watanabe,Giancarlo Salviati,Naoki Yamamoto Conference procee

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41#
發(fā)表于 2025-3-28 14:49:16 | 只看該作者
Nanoscale Spectroscopy and Its Applications to Semiconductor Research978-3-540-45850-0Series ISSN 0075-8450 Series E-ISSN 1616-6361
42#
發(fā)表于 2025-3-28 22:27:15 | 只看該作者
X-ray Photoemission and Low-Energy Electron Microscope,A small state-of-the-art X-ray photoemission and and low energy microscope with electron mirror corrector has been developed. The paper describes requirements, design aspects and status of the microscope.
43#
發(fā)表于 2025-3-28 23:53:43 | 只看該作者
44#
發(fā)表于 2025-3-29 07:00:57 | 只看該作者
Application of Imaging-Type Photoelectron Spectromicroscopy to Solid-State Physics,face science but also for spectroscopy of small samples. We report here as demonstrations of the apparatus, a combined spectroscopy with laser light, the magnetic domain image of Fe(110) surface with magnetic dichroism effect, and the photoemission spectra from small organic materials.
45#
發(fā)表于 2025-3-29 09:17:15 | 只看該作者
46#
發(fā)表于 2025-3-29 11:33:01 | 只看該作者
47#
發(fā)表于 2025-3-29 16:19:35 | 只看該作者
Manipulating, Reacting, and Constructing Single Molecules with a Scanning Tunneling Microscope Tip,gy. The STM manipulation techniques useful in the molecular construction are reviewed and prospects for future opportunities of single molecule chemical engineering and their possible implications to nano-scale science and technology are discussed.
48#
發(fā)表于 2025-3-29 22:40:38 | 只看該作者
0075-8450 of reference for the experienced reseracher, taking into account at the same time the needs of postgraduate students and nonspecialist researchers by using a tutorial approach throughout.978-3-662-14372-8978-3-540-45850-0Series ISSN 0075-8450 Series E-ISSN 1616-6361
49#
發(fā)表于 2025-3-30 00:44:41 | 只看該作者
Development of Cathodoluminescence (CL) for Semiconductor Research, Part I: TEM-CL Study of Microstorigin of the luminescence. In this article we present some applications of the technique to the studies of microstructures and defects in semiconductor epilayers, i.e., dislocations in GaN, defects concerning with the Y. emission in ZnSe and the structural defects concerned with the linear features in monochromatic CL images of InGaAs epilayers.
50#
發(fā)表于 2025-3-30 06:39:19 | 只看該作者
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