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Titlebook: Nanometer Variation-Tolerant SRAM; Circuits and Statist Mohamed H. Abu-Rahma,Mohab Anis Book 2013 Springer Science+Business Media New York

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發(fā)表于 2025-3-21 18:16:40 | 只看該作者 |倒序瀏覽 |閱讀模式
書目名稱Nanometer Variation-Tolerant SRAM
副標題Circuits and Statist
編輯Mohamed H. Abu-Rahma,Mohab Anis
視頻videohttp://file.papertrans.cn/661/660849/660849.mp4
概述Provides comprehensive review of state-of-the-art, variation-tolerant SRAM circuit techniques.Discusses Impact of device related process variations and how they affect circuit and system performance,
圖書封面Titlebook: Nanometer Variation-Tolerant SRAM; Circuits and Statist Mohamed H. Abu-Rahma,Mohab Anis Book 2013 Springer Science+Business Media New York
描述.Variability is one of the most challenging obstacles for IC design in the nanometer regime.? In nanometer technologies, SRAM show an increased sensitivity to process variations due to low-voltage operation requirements, which are aggravated by the strong demand for lower power consumption and cost, while achieving higher performance and density.? With the drastic increase in memory densities, lower supply voltages, and higher variations, statistical simulation methodologies become imperative to estimate memory yield and optimize performance and power..This book. .is an invaluable reference on robust SRAM circuits and statistical design methodologies for researchers and practicing engineers in the field of memory design. It combines state of the art circuit techniques and statistical methodologies to optimize. .SRAM performance and yield in nanometer technologies. ?.Provides comprehensive review of state-of-the-art, variation-tolerant SRAM circuit techniques; .Discusses Impact of device related process variations and how they affect circuit and system performance, from a design point of view;.Helps designers optimize memory yield, with practical statistical design methodologies and
出版日期Book 2013
關(guān)鍵詞Embedded Systems; Integrated Circuit Design; Integrated Circuit Variability; Reliable Integrated Circui
版次1
doihttps://doi.org/10.1007/978-1-4614-1749-1
isbn_softcover978-1-4939-0220-0
isbn_ebook978-1-4614-1749-1
copyrightSpringer Science+Business Media New York 2013
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Variation-Tolerant SRAM Write and Read Assist Techniques,overhead. In the last few years, there has been extensive research in this area to help overcome the SRAM stability challenges. In this chapter, we start by defining the various metrics used to analyze write and read stability. These metrics are critical in the evaluation of SRAM stability and the e
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A Methodology for Statistical Estimation of Read Access Yield in SRAMs,ility for SRAM brings many challenges to memory designers. In this chapter, we look at the different statistical techniques used to estimate failure probability, including both conventional and state-of-the-art approaches. As an application of SRAM statistical simulation techniques, we present a met
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