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Titlebook: Microscopy of Semiconducting Materials; Proceedings of the 1 A. G. Cullis,J. L. Hutchison Conference proceedings 20051st edition Springer-V

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書目名稱Microscopy of Semiconducting Materials
副標題Proceedings of the 1
編輯A. G. Cullis,J. L. Hutchison
視頻videohttp://file.papertrans.cn/634/633444/633444.mp4
圖書封面Titlebook: Microscopy of Semiconducting Materials; Proceedings of the 1 A. G. Cullis,J. L. Hutchison Conference proceedings 20051st edition Springer-V
描述.This is a long-established international biennial conference series, organised in conjunction with the Royal Microscopical Society, Oxford, the Institute of Physics, London and the Materials Research Society, USA. The 14.th. conference in the series focused on the most recent advances in the study of the structural and electronic properties of semiconducting materials by the application of transmission and scanning electron microscopy. The latest developments in the use of other important microcharacterisation techniques were also covered and included the latest work using scanning probe microscopy and also X-ray topography and diffraction. Developments in materials science and technology covering the complete range of elemental and compound semiconductors are described in this volume..
出版日期Conference proceedings 20051st edition
關鍵詞electron microscope; electron microscopy; integrated circuit; nanostructures; plasma processing; scanning
版次1
doihttps://doi.org/10.1007/3-540-31915-8
isbn_softcover978-3-642-06870-6
isbn_ebook978-3-540-31915-3
copyrightSpringer-Verlag Berlin Heidelberg 2005
The information of publication is updating

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Stranski-Krastanov growth for InGaN/GaN: wetting layer thickness changesity and the wetting layer thickness with growth time have been studied. The nanostructure density was found to saturate with increasing growth time, but unexpectedly, the nanostructure size was also seen to stabilise. We have used high-resolution transmission electron microscopy (HRTEM) to further i
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In GaN-GaN quantum wells: their luminescent and nano-structural propertiesectra of single quantum wells show an excitonic emission mechanism that is localised on a length scale of 12–30?. Using high-resolution STEM high-angle annular dark field imaging we have looked for nano-structural features in high-indium content multiple and single quantum wells. We find the existen
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