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Titlebook: Microelectronic Materials and Processes; R. A. Levy Book 1989 Kluwer Academic Publishers 1989 Metall.X-Ray.alloy.crystal.semiconductors

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發(fā)表于 2025-3-23 10:12:11 | 只看該作者
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發(fā)表于 2025-3-23 13:54:33 | 只看該作者
Physical Vapor Deposition, to transistors. With the ever-increasing complexity of silicon integrated circuits and the development of GaAs circuits, a much wider range of materials must be deposited to fulfill special needs for patterning, electromigration, diffusion barriers, Schottky contacts, air bridges, etc. (Table 1); a
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發(fā)表于 2025-3-24 00:40:14 | 只看該作者
Dielectric Materials,e years. Their major functions have been for isolating circuit elements, serving as material for storage capacitors, masking against or gettering of trace impurities, masking against oxygen and dopant diffusion, passivating and protecting device surfaces, insulating double-level conductor lines, and
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Fine-Line Lithography, but there are many others of significance including opto-electronic components, thin film magnetic recording heads, surface wave devices and structures so small that they can be used by physicists to probe quantum effects in electronic conduction. The range of sizes encompassed by these devices and
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