Titlebook: Localization and Metal-Insulator Transitions; Hellmut Fritzsche,David Adler Book 1985 Springer Science+Business Media New York 1985 band s

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The Mott Mobility Edge and the Magnetic PolaronThis paper reviews the metal-insulator transition in a magnetic semiconductor with random potential fluctuations. The transition is explained in terms of Mott’s mobility edge in disordered systems and the magnetic polaron.

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Metal-Insulator Transitions in Pure and Doped VO2ll as theoretical investigations. Up to now more than six hundred papers have been devoted to the subject, most of them published in the seventies, as a consequence of better knowledge on the narrow band materials, following a series of articles of Mott (2) and their quantitative treatment by Hubbard (3)

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The Metal-Insulator Transition in Liquid, Doped Crystalline and Amorphous Semiconductors: The Effectcalized states in liquid, doped crystalline, and amorphous semiconductors. Major emphasis is placed on the need of taking into account electron-electron interaction in both the insulating and metallic states in the interpretation of the experimental relationships observed.

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Tuning the Metal-Insulator Transition in N-Type Silicon with a Magnetic Field it has been widely recognized that a magnetic field could be used to tune a metallic sample through the Metal-Insulator (MI) transition. Several experimental groups. have successfully tuned n-type InSb through the MI transition with modest magnetic fields. For InSb it is easy to bring the magnetic

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Metal-Semiconductor Transitions in Doped IV-VI Semiconductorshe right, there is another closeknit family of nonmetals, the column-V semimetals As, Sb, and Bi, and the IV-VI semiconductor compounds. This review will focus on PbTe, SnTe, GeTe, and some of their alloys.. Up until a few years ago, there would have been very little to say about the metal-semicondu

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Metal-Insulator Transitions in Pure and Doped VO2ll as theoretical investigations. Up to now more than six hundred papers have been devoted to the subject, most of them published in the seventies, as a consequence of better knowledge on the narrow band materials, following a series of articles of Mott (2) and their quantitative treatment by Hubbar

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Composition-Controlled Metal-Insulator Transitions in Metal Oxidesnt of view of metal-insulator (MI) transitions in strongly correlated systemm.. These oxides exhibit enormous range of interesting properties. Thus, LaTiO. and LaNiO. have low resistivities at room temperature (~10. and ~10. Ω cm respectively). LaNiO. has a positive temperature coefficient of resist