Titlebook: Light Scattering in Semiconductor Structures and Superlattices; David J. Lockwood,Jeff F. Young Book 1991 Springer Science+Business Media

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Optical Phonons and Raman Spectra in InAs/GaSb Superlatticeheir electronic properties .. To the best of our knowledge, their interesting dynamical properties are stiL.L. under investigation. A linear-chain model. has been applied to long period SL of this kind, giving the basic features of the normal modes of vibration for wavevectors along the SL-axis. Fur

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Raman Scattering Studies of Optical Phonons in GaAs/AlAs and GaAs/AlxGa1-xAs Superlattices do not. As a consequence, in GaAs/AlAs superlattices the acoustic phonon modes are the folded modes which can propagate through the whole superlattice, and the optical modes are the confined modes which are confined in GaAs and AlAs layers, respectively. (GaAs)./(AlAs). superlattices on (001)-orien

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Analysis of Raman Spectra of GeSi Ultrathin Superlattices and Epilayers one may construct a structure by depositing a few atomic layers of Ge on a silicon substrate, or build a superlattice (GemSin)p where m atomic layers of Ge are followed by n atomic layers of Si to form a super-cell, which is repeated p times along the growth direction. A versatile method for invest

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Characterization of Strain and Epitaxial Quality in Si/Ge Heterostructuresh as double crystal diffractometry can be used to determine the strain partition, layer thickness, alloy composition and epitaxial quality in Si/Ge heterostruc-tures, and some of this information can also be obtained from Raman measurements of the acoustic and optic phonons. The relative merits of t

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