Titlebook: Laser Processing and Diagnostics; Proceedings of an In Dieter B?uerle Conference proceedings 1984 Springer-Verlag Berlin Heidelberg 1984 cr

Harrowing

Folklore

Laser Recrystallisation of Silicon-on-Oxidestudied the use of a cw argon ion laser to recrystallise fine grain polysilicon deposited onto oxidised silicon wafers, utilising lateral seeding techniques to extend the area of recrystallised material. This paper describes in detail the results of this work. The design of a new line beam processor

capillaries

Fundamentals of Laser Micromachining of Metals already various applications such as drilling, cutting, welding, glazing, annealing and hardening. To understand and utilize laser microprocessing some of the physical processes involved are reported: intensity-dependent absorption, laser workpiece interaction by optical feedback, and plasma genera

epicondylitis

Surface Modelling During Laser Microprocessingtensity, pulse duration, polarization, and angle of incidence. The threshold intensity for the formation of the surface damage pattern is determined with respect to illumination conditions and material parameters. The initial and the laser-induced microroughness of the surface influence the evolutio

Spirometry

Electronic Structure of Adsorbed Layerspopulation of excited electronic states in the adsorbate layer. A satisfactory description of both the excited and the ground state electronic structure of the adsorbate-substrate system is thus a necessary prerequisite for understanding these phenomena. This article attempts to explain simply some

環(huán)形

Laser Photochemistry of Molecular Systems Involving Gas-Surface Interactionsy and extending them to surface photochemistry. Although this field is still largely unexplored many new and unexpected observations have already been made. It has also become apparent that more than in other types of laser chemistry technical applications of the observed effects are conceivable.

Aviary

BIAS

LEVY

Fracture

Time Resolved Calorimetry of 30 nm Te-Films During Laser AnnealingThe temperature of 30 nm thick Te films has been studied during annealing with a XeCl Excimer laser. Using a pyroelectric thin film calorimeter melting, boiling and recrystallization were observed. Boiling was identified as the prevalent mechanism for the loss of material.