Titlebook: Introduction to Thin Film Transistors; Physics and Technolo S.D. Brotherton Book 2013 Springer International Publishing Switzerland 2013 Ac

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Hydrogenated Amorphous Silicon TFT Technology and Architecturethese processes are presented. Finally, some novel a-Si:H TFT structures are described, including self-aligned and short channel TFTs, as well as high stability devices deposited under conditions of enhanced hydrogen dilution of the PECVD reactant gases.

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Transparent Amorphous Oxide Semiconductor TFTs-held AMOLED displays. In this chapter, the material and electronic properties of AOS materials are reviewed, paying particular attention to a-InGaZnO TFTs. Other topics include device architecture and fabrication, the DOS and conduction mechanisms within the material, overall device performance, and bias stability issues.

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Introduction,diagonals currently available, this is the most ubiquitous and successful display technology to date. Screen sizes from 1?inch to more than 100?inches dominate applications in most areas of life, from small, portable mobile phone displays, through medium-sized tablets, net-books and lap-tops, to large-screen monitors and HD televisions.

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Poly-Si TFT Performanceand an overview of the bias stress instability mechanisms in these devices. Finally, there is a discussion of short channel effects, including the role of parasitic bipolar transistor action caused by floating body effects.

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Book 2013 interest for large area electronics. The TFT materials covered include hydrogenated amorphous silicon (a-Si:H), poly-crystalline silicon (poly-Si), transparent amorphous oxide semiconductors (AOS), and organic semiconductors. .The large scale manufacturing of a-Si:H TFTs forms the basis of the?acti

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978-3-319-03310-5Springer International Publishing Switzerland 2013

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