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Titlebook: Introduction to Applied Solid State Physics; Topics in the Applic Richard Dalven Book 1990Latest edition Plenum Press, New York 1990 commun

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書目名稱Introduction to Applied Solid State Physics
副標題Topics in the Applic
編輯Richard Dalven
視頻videohttp://file.papertrans.cn/474/473424/473424.mp4
圖書封面Titlebook: Introduction to Applied Solid State Physics; Topics in the Applic Richard Dalven Book 1990Latest edition Plenum Press, New York 1990 commun
描述In addition to the topics discussed in the First Edition, this Second Edition contains introductory treatments of superconducting materials and of ferromagnetism. I think the book is now more balanced because it is divided perhaps 60% - 40% between devices (of all kinds) and materials (of all kinds). For the physicist interested in solid state applications, I suggest that this ratio is reasonable. I have also rewritten a number of sections in the interest of (hopefully) increased clarity. The aims remain those stated in the Preface to the First Edition; the book is a survey of the physics of a number of solid state devices and ma- terials. Since my object is a discussion of the basic ideas in a number of fields, I have not tried to present the "state of the art," especially in semi- conductor devices. Applied solid state physics is too vast and rapidly changing to cover completely, and there are many references available to recent developments. For these reasons, I have not treated a number of interesting areas. Among the lacunae are superiattices, heterostructures, compound semiconductor devices, ballistic transistors, integrated optics, and light wave communications. (Suggested r
出版日期Book 1990Latest edition
關鍵詞communication; magnetism; optics; solid state physics; transistor
版次2
doihttps://doi.org/10.1007/978-1-4684-1330-4
isbn_softcover978-1-4684-1332-8
isbn_ebook978-1-4684-1330-4
copyrightPlenum Press, New York 1990
The information of publication is updating

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Semiconductor , Junction Devices,ains the negative dynamic resistance characteristic of this device. Finally, the junction field effect transistor is discussed, also qualitatively, and its function as a voltage-controlled amplifier is treated.
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Physics of Metal-Semiconductor and Metal-Insulator-Semiconductor Junctions, the band diagram of an idealized MIS structure. The key result is the formation of an inversion layer at the insulator-semiconductor interface when an appropriate potential is applied. This result will be used in the next chapter to study two important devices, the induced-channel field-effect transistor and the charge-coupled device.
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Superconductive Devices and Materials,ting ring leads to the idea of superconducting quantum interference and devices (DC SQUIDs) based thereon. Finally, the chapter concludes with a discussion of superconducting materials, with emphasis on the factors determining the magnitudes of the transition temperature, the critical magnetic field, and, briefly, the critical current density.
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