Titlebook: Intersubband Transitions in Quantum Wells: Physics and Devices; Sheng S. Li,Yan-Kuin Su Book 1998 Springer Science+Business Media New York

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Normal Incident Two Color Voltage Tunable InGaAs Quantum Well Infrared Photodetectorsn demonstrated. Two different structures were used for different voltage tuning characteristics. The In.Ga.As/Al.Ga.As quantum wells with 3.5.0. cm. Si doping were used to fabricated MWIR QWIP with bound to bound transition and bound to continuum transition. In.Ga.As/GaAs quantum wells with 1.0. cm.

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Far-Infrared (λ,=28.6 μm) GaAs/AlGaAs Quantum Well Photodetectors transitions. The responsivity is comparable to that of mid-infrared GaAs/AlGaAs and In GaAs/GaAs QWIPs. A responsivity of 0.265 A/W and detectivity of 2.5 x 10. cm. at the peak wavelength of 26.9 μm at 4.2K have been achieved. Based on the temperature dependent dark current and response results, it

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