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Titlebook: Interfaces Under Laser Irradiation; L. D. Laude,D. B?uerle,M. Wautelet Book 1987 Springer Science+Business Media Dordrecht 1987 liquid.pol

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31#
發(fā)表于 2025-3-26 22:21:02 | 只看該作者
Adsorption, Desorption, and Surface Reactions,cuum technology. The use of single crystal surfaces is of particular importance in these studies in order to relate the physical characteristics of the fundamental processes mentioned above to specific adsorption sites.
32#
發(fā)表于 2025-3-27 01:10:40 | 只看該作者
Mechanisms of Laser-Induced Desorption from Insulators and Compound Semiconductors,ilver halides, formation of excitons near the surface results in atomic processes, while, in many others, interaction of two excitation events (two holes) is responsible for atomic processes. Several mechanisms of formation of two hole states are described.
33#
發(fā)表于 2025-3-27 06:00:20 | 只看該作者
Laser Enhanced Electroplating,electomotive force and has been described in several other references (4). The enhancement mechanisms for laser enhanced electroplating have been investigated in considerable detail for the system Cu/Cu. in conjunction with a focused argon laser using microscope slide glass substrates with a thin predeposited metal layer (3).
34#
發(fā)表于 2025-3-27 12:10:31 | 只看該作者
Electronic Structure at Semiconductor Surfaces and Interfaces,. The amount of necessary calculation greatly increases. Then one may use approximations to simulate the surface like slabs keeping a good sophisticated band model. An other possibility is to treat a perfect semi-infinite crystal whereas the approximations are made in the band model.
35#
發(fā)表于 2025-3-27 15:14:47 | 只看該作者
36#
發(fā)表于 2025-3-27 21:17:32 | 只看該作者
Monte Carlo Simulations of Surface Reactions,tically studied. A MC simulation can be used, therefore, to give an exhaustive account of the . consequences issued from the specific assumptions, data, theory and mechanisms involved in the construction of a conceptual model.
37#
發(fā)表于 2025-3-27 22:53:21 | 只看該作者
38#
發(fā)表于 2025-3-28 02:20:22 | 只看該作者
Electronic Structure at Semiconductor Surfaces and Interfaces,l or interstitial impurities can also be studied using for example the Green function formalism. In such cases, the perturbation of the perfect infinite crystal is localized to the impurity site and a few of its nearest neighbours leading to a small finite size of the perturbative potential. This is
39#
發(fā)表于 2025-3-28 06:24:44 | 只看該作者
Molecule-Surface Interaction: Vibrational Excitations,portant position. In the last decades much progress has been made in the subject of gas-surface interaction, not only in the traditional realm of aerospace research (1), but also, and prominently, in the fields of heterogeneous catalysis, surface chemistry, molecular beam epitaxy (MBE), ion implanta
40#
發(fā)表于 2025-3-28 10:35:02 | 只看該作者
Melting and Surfaces,binding forces. Some examples are the glassy, the liquid, the crystalline or the liquid crystal states. Normally, these states are separated by lines in the relevant phase diagram, i.e. by phase transitions. I would like to consider the melting transition, defined as the line between the crystalline
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