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Titlebook: Integrated Circuit Defect-Sensitivity: Theory and Computational Models; José Pineda Gyvez Book 1993 Springer Science+Business Media New Yo

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發(fā)表于 2025-3-23 13:03:27 | 只看該作者
José Pineda de Gyvezus of the World Health Organization says in the Foreword, “This new expanded edition comes as a timely essential aid against the growing threats of inhuman violence and destructive disasters.”978-1-4614-4444-2978-1-4614-4445-9
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發(fā)表于 2025-3-23 16:22:15 | 只看該作者
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發(fā)表于 2025-3-24 04:04:18 | 只看該作者
0893-3405 as that many small design companies would share the investment into the extremely costful Silicon fabrication plants while designing large lots of application-specific integrated circuits (ASIC‘s). Those fabrication plants would be concentrated with only a few market leaders.978-1-4613-6383-5978-1-4615-3158-6Series ISSN 0893-3405
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發(fā)表于 2025-3-24 08:27:56 | 只看該作者
Computational Models for Defect-Sensitivity,a malfunction in the respective circuit arises. Critical areas are open connected sets of critical points [36,83,84]. They naturally depend on the layout geometry and on the defect size involved. Thus, the defect-sensitivity of a design is obtained as the ratio of the total critical area to the tota
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發(fā)表于 2025-3-24 19:29:13 | 只看該作者
Single vs. Multiple Layer Critical Areas,odels are good to evaluate the safeness of the artwork as a function of the probability of failure of its layers, that is, whether the patterns can undesirably be broken or joined. In the long trajectory of yield modeling, it was found that by obtaining the critical areas, a more realistic yield pre
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發(fā)表于 2025-3-24 23:12:19 | 只看該作者
Introduction,s of silicon layer structures mainly caused by dust particles, process variabilities, and contaminations of the fabrication equipment. Spot defects are in essence random phenomena occurring on the wafer with certain stochastic spatial distribution and also with a stochastic size and frequency per un
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