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Titlebook: Inside NAND Flash Memories; Rino Micheloni,Luca Crippa,Alessia Marelli Book 2010 Springer Science+Business Media B.V. 2010 Electronic Devi

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31#
發(fā)表于 2025-3-26 23:45:54 | 只看該作者
32#
發(fā)表于 2025-3-27 01:36:23 | 只看該作者
Redundancy,Redundancy is part of the NAND circuits which take care of its reliability. In addition to redundancy, modern NAND Flash use error correction codes to improve device reliability.
33#
發(fā)表于 2025-3-27 09:19:09 | 只看該作者
34#
發(fā)表于 2025-3-27 12:15:58 | 只看該作者
XLC storage,The obvious advantage of designing NAND devices capable of storing .-bit/cell (where . is currently 2, 3, and 4) is the resulting reduction in area occupation of the matrix. However, the benefits of 3-bit/cell (or 8-Level-Cell, 8LC) and 4-bit/cell (or 16-Level-Cell, 16LC) technologies don’t come for free.
35#
發(fā)表于 2025-3-27 16:03:22 | 只看該作者
Low power 3D-integrated SSD,With highly scaled 40 or 30 nm technologies, the memory capacity increases to as much as 32 Gbit as shown in Fig. 18.1. By using gigabit-capacity NAND flash memories, SSD, Solid-State Drive that uses NAND as a mass storage of personal computers and enterprise servers is expected as a next killer application of NAND Flash memories.
36#
發(fā)表于 2025-3-27 19:38:25 | 只看該作者
37#
發(fā)表于 2025-3-28 00:15:32 | 只看該作者
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發(fā)表于 2025-3-28 04:35:04 | 只看該作者
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發(fā)表于 2025-3-28 07:03:37 | 只看該作者
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