Titlebook: Inside NAND Flash Memories; Rino Micheloni,Luca Crippa,Alessia Marelli Book 2010 Springer Science+Business Media B.V. 2010 Electronic Devi

Congruous

Charge trap NAND technologies,oating gate (FG) NAND. In fact even if FG NAND is the dominant technology and there is no advice of reduction in scaling pace, several physical roadblocks seem to limit future scalability (e.g. electrostatic interference among adjacent cells). Charge trap (CT) memories may overcome some of these lim

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NAND DDR interface,ties, makes up the choice in favor of NAND Flash on board of applications traditionally linked to other types of memories (such as EEPROM and NOR) or technologies (such as Hard Disk Drives). Mobile devices, PDA, PC, camcorders, set top boxes, servers, routers, enterprise storage and many more new ap

Frequency-Range

前面

MLC storage, as much; on the other hand, the area of the periphery circuits, both analog and digital, increases. This is mainly due to the fact that the multilevel approach requires higher voltages for program (and therefore bigger charge pumps), higher precision and better performance in the generation of both

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水土

High voltage overview,r . of electrons inside the floating gate, these operations involve high electric fields (i.e. high voltages) to exploit the Fowler-Nordheim phenomena (Chap. 3 and change .. Particular attention must be taken when dealing with high voltages, since a little variation could have dramatic consequences.

遵循的規(guī)范

Error correction codes,deals with error correction codes applied to NAND Flash memories. In fact, when the memory is placed in its final application, different reasons for errors (see Chap. 4) can damage the written information so that it could happen that the read message is not equal to the original anymore [1].

fibula

Flash cards,mon characteristics. In this chapter, we will describe memory cards from a user standpoint, their internal architecture and the algorithms operating within, the difficulties with relevant counter-stratagems inherent in their design.

種子

Radiation effects on NAND Flash memories,rays with the outer layers of the atmosphere. The neutron flux changes with altitude, reaching a peak very close to the cruise altitude of airplanes, posing an even more serious threat to avionics. In addition, inevitable radioactive contaminants in the chip materials emit alpha particles, which may

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