Titlebook: Impurities Confined in Quantum Structures; Per Olof Holtz,Qing Xiang Zhao Book 2004 Springer-Verlag Berlin Heidelberg 2004 Confinement.Dop

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Impurities in Bulk,rier and a charged impurity ion to the system. The impurities will give rise to localized states in the forbidden energy gap. Based on the energy separation between the localized state and the band edge, the impurities are referred to as deep or shallow states.

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0933-033X annot be overstated. Research over the last decade has highlighted the use of quantum engineering to achieve p- viously unknown limits for device performance in research laboratories. The modi?ed electronic structure of semiconductor quantum structures results in transport and optical properties, wh

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978-3-642-62228-1Springer-Verlag Berlin Heidelberg 2004

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Impurities Confined in Quantum Structures978-3-642-18657-8Series ISSN 0933-033X Series E-ISSN 2196-2812

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https://doi.org/10.1007/978-3-642-18657-8Confinement; Doping; Electronic structure; Impurity; Optical characterization; Quantum structure; Semicond

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Quantum Wells, is limited in one direction by introducing potential barriers, a two-dimensional nanostructure, a quantum well, is formed. In this way, the properties of electronic particles in the quantum well will be modified [1–3].

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