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Titlebook: High Dielectric Constant Materials; VLSI MOSFET Applicat H.R. Huff,D.C. Gilmer Book 2005 Springer-Verlag Berlin Heidelberg 2005 CMOS.Leistu

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11#
發(fā)表于 2025-3-23 12:59:07 | 只看該作者
Issues in Metal Gate Electrode Selection for Bulk CMOS Devices
12#
發(fā)表于 2025-3-23 16:17:04 | 只看該作者
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14#
發(fā)表于 2025-3-24 00:32:20 | 只看該作者
Electrical Measurement Issues for Alternative Gate Stack Systems
15#
發(fā)表于 2025-3-24 05:28:53 | 只看該作者
16#
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發(fā)表于 2025-3-24 11:37:05 | 只看該作者
Book 2005ns and issues for ultimate technology generation scaling. The vision, wisdom, and experience of the team of authors will make this book a timely, relevant, and interesting, resource focusing on fundamentals of the 45 nm Technology Generation and beyond..
18#
發(fā)表于 2025-3-24 18:32:49 | 只看該作者
G.D. Hutcheson persisters) and their ability to first penetrate and then to disorganize these structures. In addition, AMPs frequently synergize with antimicrobial compounds and were recently reported to repress the molecular pathways leading to biofilm formation. Finally, there is a very active research to devel
19#
發(fā)表于 2025-3-24 21:38:55 | 只看該作者
E. Kooi?,A. Schmitzrevents the damaging inflammation, that could otherwise lead to life-threatening septic shock. Most importantly, the SALP may inhibit inflammation independently of the resistance status of the bacteria, and so far the repeated use of the peptides apparently does not cause resistance of the attacking
20#
發(fā)表于 2025-3-25 01:47:20 | 只看該作者
E.A. Ireneemical data have revealed the PrAMP binding sites on the ribosome as well as insight into their mechanisms of action. While the binding site of all so far investigated PrAMPs is situated within nascent polypeptide exit tunnel, the mechanism of action is distinct between class I and II PrAMPs. Specif
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