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Titlebook: Handbook of Sustainability and Social Science Research; Walter Leal Filho,Robert W. Marans,John Callewaert Book 2018 Springer Internationa

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31#
發(fā)表于 2025-3-26 23:59:45 | 只看該作者
Christine Jie Li,Martha C. Monroe,Tracey Ritchiecertainties. On the one hand, the validity of the model is guaranteed only inside a frequency band, so that nearly nothing can be said about the behavior of the real plant at high frequencies. On the other hand, if the model is derived on the basis of physical equations, it can be parameterized as a
32#
發(fā)表于 2025-3-27 02:18:47 | 只看該作者
Flora Lu,Rebecca Hernandez Rosser,Adriana Renteria,Nancy Kim,Elida Erickson,Anna Sher,Lisa O’Connorcertainties. On the one hand, the validity of the model is guaranteed only inside a frequency band, so that nearly nothing can be said about the behavior of the real plant at high frequencies. On the other hand, if the model is derived on the basis of physical equations, it can be parameterized as a
33#
發(fā)表于 2025-3-27 07:23:39 | 只看該作者
34#
發(fā)表于 2025-3-27 10:36:32 | 只看該作者
Laura B. Coles. On the one hand, the validity of the model is guaranteed only inside a frequency band, so that nearly nothing can be said about the behavior of the real plant at high frequencies. On the other hand, if the model is derived on the basis of physical equations, it can be parameterized as a function
35#
發(fā)表于 2025-3-27 17:33:39 | 只看該作者
Richard Adams,Beth Kewell,Glenn Parry velocity, water depth, grain size, and sedimentation rate. As such they are critical to the understanding of the processes and conditions of deposition and lead to an interpretation of the depositional environment. In addition, some are useful in determining “stratigraphical-up” or “way-up” in fold
36#
發(fā)表于 2025-3-27 20:40:05 | 只看該作者
37#
發(fā)表于 2025-3-27 23:20:46 | 只看該作者
38#
發(fā)表于 2025-3-28 04:43:05 | 只看該作者
39#
發(fā)表于 2025-3-28 06:43:43 | 只看該作者
40#
發(fā)表于 2025-3-28 13:16:16 | 只看該作者
Sarah Millsplanning, design requirements, the design center infrastructure, design and verification intellectual properties IPs, and design flows of different constituents of SOC. The chapter contains some of the VLSI processes like synthesis, DFT, and physical design which will be described in further chapter
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