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只看該作者 · 發(fā)表于 2025-3-21 18:48:45

書(shū)目名稱Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets影響因子(影響力)

書(shū)目名稱Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets影響因子(影響力)學(xué)科排名

書(shū)目名稱Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets網(wǎng)絡(luò)公開(kāi)度

書(shū)目名稱Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets網(wǎng)絡(luò)公開(kāi)度學(xué)科排名

書(shū)目名稱Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets被引頻次

書(shū)目名稱Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets被引頻次學(xué)科排名

書(shū)目名稱Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets年度引用

書(shū)目名稱Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets年度引用學(xué)科排名

書(shū)目名稱Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets讀者反饋

書(shū)目名稱Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets讀者反饋學(xué)科排名

只看該作者 · 發(fā)表于 2025-3-21 21:19:59

只看該作者 · 發(fā)表于 2025-3-22 03:23:21

只看該作者 · 發(fā)表于 2025-3-22 07:36:20

只看該作者 · 發(fā)表于 2025-3-22 11:40:31

只看該作者 · 發(fā)表于 2025-3-22 13:36:58

Politics and the History CurriculumIn this chapter, the scavenging concept is analyzed. As it was commented in the introduction, Kim et al. [1] explored this effect for the first time with the aim of reducing the SiO. layer that growth at the high κ/silicon interface.

只看該作者 · 發(fā)表于 2025-3-22 21:04:55

只看該作者 · 發(fā)表于 2025-3-22 21:49:30

Introduction,The integrated circuits (ICs) based on complementary metal-oxide-semiconductor (CMOS) devices are currently the dominant technology in the microelectronic industry. Its success is based on the low static power consumption and its high integration density.

只看該作者 · 發(fā)表于 2025-3-23 02:26:15

只看該作者 · 發(fā)表于 2025-3-23 08:18:58

Characterization Techniques,The study of the semiconductor/high κ interface and the properties of the dielectric film, grown using the fabrication techniques described in the former chapter, are one of the main objectives of this thesis.

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