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Bernstein-test

Power and the Analysis of Political Parties,rystal, melt, and particle surface energies .., .., .., the particles can be steadily repulsed by the crystal [., .]. There exists a certain critical velocity .., below which repulsion is possible and above which the particle can be captured. The absolute value of .. depends substantially on the mel

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Quantum-Chemical Investigation of Adsorption and Surface Migration of Atoms and Molecules on Si(111)crystals and epitaxial layers of semiconductors. Two phases come into contact through an adsorption layer in gas-transport systems and during molecular-beam growth. Processes occurring in the adsorption layers (adsorption, desorption, surface diffusion, possible chemical reactions) are known to cont

hypnogram

Step Kinetics on Crystal Surfaces in the Presence of Anisotropy and Impuritiesions. An experimental technique has recently appeared that enables the dislocation structure [.] or surface relief to be observed at the level of monatomic steps [.]. Thus, extremely fine details can be studied.

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Structural Reconstruction of Atomically-Clean Silicon Surface during Sublimation and Epitaxyrs. The determination of the nature of superstructure reconstructions, the structure of surface defects, the kinetics of adatoms, and the mechanisms of interaction with troughs are some of these processes [.–.]. The solution of these problems is especially important for the development of molecular-

CLAM

Molecular-Beam Epitaxy of Siliconurate control of their thickness, composition, and doping level. These capabilities enable thin multilayered structures with strictly controlled composition and very sharp doping profiles to be obtained with high reproducibility [.–.]. Moreover, the number of heterostructures available by this metho

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