Titlebook: GaN-Based Laser Diodes; Towards Longer Wavel Wolfgang G. Scheibenzuber Book 2012 Springer-Verlag Berlin Heidelberg 2012 Green Laser Diode.O

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2190-5053 achieve longer emission wavelengths and short-pulse emission. Experimental and theoretical approaches are employed to address the individual device properties and optimize the laser diodes toward the requirements of specific applications.978-3-642-43548-5978-3-642-24538-1Series ISSN 2190-5053 Series E-ISSN 2190-5061

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Thermal Properties, devices due to ohmic losses and non-radiative recombination is a limiting factor, as an increase in device temperature results in a reduction of output power, a redshift of the emission wavelength, and thermal lensing. Therefore it is crucial to investigate the mechanisms of self-heating in laser d

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Short-Pulse Laser Diodes, the improvement of maximum output power and efficiency. The principal device concept is the Fabry-Perot-type single-section ridge laser diode. Other device concepts, which have been extensively studied in the group-III-arsenide and -phosphide material systems, are scarcely implemented in the nitrid

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Summary and Conclusions,n wavelength and realize true-green laser diodes for projection and display applications. Furthermore, it covers the realization of multi-section laser diodes on GaN, a device concept for the generation of short pulses, which is successfully adapted from infrared laser diodes. Spectral and temporal

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Was hei?t Stre??ich Monotonie und Gleichf?rmigkeit bestimmter Arbeitsroutinen noch hinzu, dann hei?t dies, da? die H?lfte aller arbeitsbezogenen Belastungen eine Form von Stre? darstellt. Erst danach kommen rein physische Aspekte wie L?rm, Hitze, Staub, Geruch und sonstige Bel?stigungen hinzu (vgl. Tabelle 1).