| 書目名稱 | Fundamentals of Nanoscaled Field Effect Transistors |
| 編輯 | Amit Chaudhry |
| 視頻video | http://file.papertrans.cn/351/350413/350413.mp4 |
| 概述 | Covers the fundamental principles behind nanoelectronics/microelectronics.Includes chapters devoted to solutions tackling the quantum mechanical effects occurring at nanoscale.Provides some case studi |
| 圖書封面 |  |
| 描述 | .Fundamentals of Nanoscaled Field Effect Transistors. gives comprehensive coverage of the?fundamental physical principles and theory behind nanoscale transistors.?The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-κ technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book.. |
| 出版日期 | Book 2013 |
| 關(guān)鍵詞 | Ballistic Effect Devices; Biaxial Strained Si Technology; Compact MOSFET Models; Electron Devices; MOSFE |
| 版次 | 1 |
| doi | https://doi.org/10.1007/978-1-4614-6822-6 |
| isbn_softcover | 978-1-4939-4482-8 |
| isbn_ebook | 978-1-4614-6822-6 |
| copyright | Springer Science+Business Media New York 2013 |
|Archiver|手機(jī)版|小黑屋|
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