| 書(shū)目名稱 | Ferroelectric Random Access Memories | | 副標(biāo)題 | Fundamentals and App | | 編輯 | Hiroshi Ishiwara,Masanori Okuyama,Yoshihiro Arimot | | 視頻video | http://file.papertrans.cn/343/342102/342102.mp4 | | 概述 | Presents the state of the art of ferroelectric RAM design.Application oriented reviews by leading experts.Up-to-date references.Includes supplementary material: | | 叢書(shū)名稱 | Topics in Applied Physics | | 圖書(shū)封面 |  | | 描述 | .In fabrication of FeRAMs, various academic and technological backgrounds are necessary, which include ferroelectric materials, thin film formation, device physics, circuit design, and so on. This book covers from fundamentals to applications of ferroelectric random access memories (FeRAMs). The book consists of 5 parts: (1) ferroelectric thin films, (2) deposition and characterization methods, (3) fabrication process and circuit design, (4) advanced-type memories, and (5) applications and future prospects; each part is further divided into several chapters. Because of the wide range of topics discussed, each chapter in this book was written by one of the best authors knowing the specific topic very well. Thus, this is a good introductory book on FeRAM for graduate students and newcomers to this field; it also?helps specialists to understand FeRAMs more deeply.. | | 出版日期 | Book 2004 | | 關(guān)鍵詞 | Ferroelectric RAM; Metals and Alloys; Random Access Memory; Semiconductors; alloy; circuit design; High De | | 版次 | 1 | | doi | https://doi.org/10.1007/b12953 | | isbn_softcover | 978-3-642-07384-7 | | isbn_ebook | 978-3-540-45163-1Series ISSN 0303-4216 Series E-ISSN 1437-0859 | | issn_series | 0303-4216 | | copyright | Springer-Verlag Berlin Heidelberg 2004 |
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