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Titlebook: Exoemission from Processed Solid Surfaces and Gas Adsorption; Yoshihiro Momose Book 2023 The Editor(s) (if applicable) and The Author(s),

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21#
發(fā)表于 2025-3-25 03:22:22 | 只看該作者
22#
發(fā)表于 2025-3-25 08:15:18 | 只看該作者
George J. Suci,Steven S. Robertsonace of metals and semiconductors, as well as the influence of foreign adsorbed materials on the transfer, is included under the following themes in this section: involvement in surface chemistry technology, classification of electron emission and the work function, exoemission phenomena of processed
23#
發(fā)表于 2025-3-25 15:37:07 | 只看該作者
24#
發(fā)表于 2025-3-25 19:48:00 | 只看該作者
Marina Bar-Shai M.D., Ph.D.,Ehud Klein M.D.lectron capture centers or factors that influence the intensity of EE. The oxide film on metals also facilitates EE from the surface. Metals used in this context include Al, Mg, Ni, Sn, Fe, and Cu. We describe the effects of the oxide-film thickness, gas adsorption, temperature, light irradiation, a
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發(fā)表于 2025-3-25 21:57:12 | 只看該作者
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發(fā)表于 2025-3-26 03:32:29 | 只看該作者
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29#
發(fā)表于 2025-3-26 15:50:58 | 只看該作者
https://doi.org/10.1007/978-3-031-46448-5be TAPE of Si wafers obtained under temperature scans and incident light wavelength scans. We also report the characteristics (activation energy, photothreshold, and total counts of emitted electrons) of Si samples with an oxide layer and Si samples implanted with H, Si, and Ar ions.
30#
發(fā)表于 2025-3-26 17:17:33 | 只看該作者
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