Titlebook: Electronic Structure of Semiconductor Heterojunctions; Giorgio Margaritondo Book 1988 Editoriale Jaca Book spa, Milano 1988 electron.elect

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agitate

Experiments on Ge-GaAs Heterojunctionscharacteristics are consistent with a model in which the conduction- and valence-band edges at the interface are discontinuous. The forbidden band in heavily doped (.-type) germanium appears to shift to lower energy values.

狼群

Heterojunctions: Definite breakdown of the electron affinity rulel to predict semiconductor-semiconductor band lineups. The results show, beyond any experimental uncertainty, that the rule is incorrect. The elimination of the rule and of all models related to it considerably simplifies the theoretical situation of this fundamental area of solid-state physics.

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STENT

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languid

Mathias Diebig,Kai N. Klasmeierergy band diagram of a device and thus modifying its electrical transport properties (band gap engineering) (1). The most interesting property, which has far reaching consequences for devices made of these materials, is that electrons and holes experience different electric forces so the transport p

長(zhǎng)處

https://doi.org/10.1007/978-3-658-30127-9field in the Introduction, in the second section resonant tunneling through double barriers is investigated. Recent conflicting interpretations of this effect in terms of a Fabry-Perot mechanism or sequential tunneling are reconciled via an analysis of scattering. It is shown that the ratio of the i