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Titlebook: Electronic Materials; A New Era in Materia James R. Chelikowsky,Alfonso Franciosi Textbook 1991 Springer-Verlag Berlin Heidelberg 1991 Werk

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31#
發(fā)表于 2025-3-26 22:42:11 | 只看該作者
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34#
發(fā)表于 2025-3-27 10:56:42 | 只看該作者
Individualism and World Politicsance of silicon technology. When it comes to systematically improving materials, it is of prime interest to know the electronic structure in great detail. Examples are III-V compounds, where the band structure allows for higher mobilities, ergo faster speed, than in Si. The character of the band gap
35#
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0171-1873 and engi- neering will be directly involved in furthering the revolution in electronic mate- rials. With this book, we want to welcome such students to electro978-3-642-84361-7978-3-642-84359-4Series ISSN 0171-1873 Series E-ISSN 2197-4179
37#
發(fā)表于 2025-3-28 00:30:38 | 只看該作者
Determination of the Electronic Structure of Solids,ance of silicon technology. When it comes to systematically improving materials, it is of prime interest to know the electronic structure in great detail. Examples are III-V compounds, where the band structure allows for higher mobilities, ergo faster speed, than in Si. The character of the band gap
38#
發(fā)表于 2025-3-28 04:52:19 | 只看該作者
Predicting the Properties of Solids, Clusters and Superconductors,ronic energy bands. This collaborative research between experimentalists and theorists served a similar role for solids to the one that atomic spectroscopy had for the development of quantum mechanics itself. It provided a data base of measured energy levels which could be used to test theoretical p
39#
發(fā)表于 2025-3-28 10:08:38 | 只看該作者
40#
發(fā)表于 2025-3-28 11:28:29 | 只看該作者
Photonic and Electronic Devices Based on Artificially Structured Semiconductors,In the last decade solid state electronics has continued its remarkable progress towards faster and smaller devices and circuits. Its ongoing development consistently defies the predictions of the many people who elaborate on the “ultimate” device performance. All this has been achieved through the continued refinement of silicon technology [10.1].
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