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Titlebook: Electronic Materials; From Silicon to Orga L. S. Miller,J. B. Mullin Book 1991 Springer Science+Business Media New York 1991 electronic mat

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發(fā)表于 2025-3-23 13:21:58 | 只看該作者
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發(fā)表于 2025-3-23 17:45:11 | 只看該作者
Technologies for High-Speed Compound Semiconductor ICs,enges for the process engineer. For analog applications the diversity of frequencies from about 1 GHz to 100 GHz means that a standard technology cannot be adopted for the whole frequency spectrum as the circuit topologies required at each end of this frequency range differ widely. At low frequencie
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發(fā)表于 2025-3-23 20:48:33 | 只看該作者
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發(fā)表于 2025-3-24 01:28:17 | 只看該作者
Microstructural and Compositional Characterization of Thin-Film Semiconductor Materials by Transmisaterials in thin-film form and of extremely high purity. With advances in the field of metalorganic vapor phase epitaxy (MOVPE), molecular beam epitaxy (MBE), and metalorganic molecular beam epitaxy (MOMBE) has come the need to characterize materials using methods with higher sensitivities and much
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發(fā)表于 2025-3-24 04:49:15 | 只看該作者
Dielectric Properties and Materials, question, of course, was that opened up by Thales of Milerus around 500 BC, when he is reported to have rubbed some amber with fur and noticed that the amber then attracted particles over small, but finite, distances and that this attractive property decayed in time. Frictional electricity, as it c
16#
發(fā)表于 2025-3-24 08:42:40 | 只看該作者
Piezoelectric and Pyroelectric Materials and Their Applications,als. Pyroelectricity, the release of charge due to a material’s change of temperature, occurs in all materials that belong to a polar crystal symmetry class. It should be noted that, as not all noncentrosymmetric classes are polar (222, 4, 422, ., 32, 6, 622, ., 23, and . are the nonpolar, noncentro
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發(fā)表于 2025-3-24 11:17:49 | 只看該作者
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發(fā)表于 2025-3-24 18:47:06 | 只看該作者
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發(fā)表于 2025-3-24 22:54:49 | 只看該作者
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發(fā)表于 2025-3-25 03:08:34 | 只看該作者
Silicon Processing: CMOS Technology, modern production processes have 1-. m minimum feature sizes that permit a million transistors or more to be made in silicon chips of 1 cm.. Although the name CMOS has been retained the gates are no longer made from metal but from polysilicon.
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