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Titlebook: Early Stages of Oxygen Precipitation in Silicon; R. Jones Book 1996 Kluwer Academic Publishers 1996 Magnetic Resonance.crystal.modeling.se

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樓主: Jackson
31#
發(fā)表于 2025-3-26 23:00:19 | 只看該作者
Infrared Studies of the Early Stages of Oxygen Clustering in Silicon,d, which originates from a type of oxygen precipitate. Different aspects of the TDs will be presented, such as results from samples doped with the O. isotope, the bistability of the first two appearing TDs, the influence on the TD formation process from other impurity atoms, from electron irradiatio
32#
發(fā)表于 2025-3-27 02:18:33 | 只看該作者
Magnetic Resonance Investigations of Thermal Donors in Silicon, the donor state. Both centers appear to exist in a large number of configurations, up to 17 have been reported, the versions with smaller binding energy and more isotropic g tensor developing upon increase of the heat treatment time. These very similar, but yet distinct, configurations are not reso
33#
發(fā)表于 2025-3-27 05:39:15 | 只看該作者
34#
發(fā)表于 2025-3-27 12:07:40 | 只看該作者
The Electronic Structure of the Oxygen Donor in Silicon from Piezospectroscopy,ground state of the oxygen donor is constructed from the effective-mass wave functions associated with a single pair of conduction band valleys. In this paper, a survey of the piezospectroscopic results is presented.
35#
發(fā)表于 2025-3-27 14:15:38 | 只看該作者
36#
發(fā)表于 2025-3-27 17:45:33 | 只看該作者
37#
發(fā)表于 2025-3-27 22:15:13 | 只看該作者
Nachhaltigkeit — was hei?t das eigentlich the donor state. Both centers appear to exist in a large number of configurations, up to 17 have been reported, the versions with smaller binding energy and more isotropic g tensor developing upon increase of the heat treatment time. These very similar, but yet distinct, configurations are not reso
38#
發(fā)表于 2025-3-28 02:55:53 | 只看該作者
39#
發(fā)表于 2025-3-28 08:19:50 | 只看該作者
40#
發(fā)表于 2025-3-28 13:50:47 | 只看該作者
Verhaltenswissenschaftliche Grundlagen, quasi-substitutional (off-centre or oxygen-vacancy) forms in GaAs and in Si. I will present a summary of the illumination effects observed for the oxygen-vacancy (OV.) in semi-insulating (SI) GaAs in relation with changes in the charge states and metastability of this centre. I will discuss finally
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