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Titlebook: Disordered Materials; Science and Technolo David Adler,Brian B. Schwartz,Marvin Silver Book 1991 Plenum Press, New York 1991 adsorption.cer

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21#
發(fā)表于 2025-3-25 05:07:09 | 只看該作者
22#
發(fā)表于 2025-3-25 08:01:59 | 只看該作者
Local Structure, Bonding, and Electronic Properties of Covalent Amorphous Semiconductorscovered and characterized, an inordinately large effort was expended into understanding the properties of those amorphous materials with simple crystalline analogues. It is the purpose of this paper to emphasize the new modes of behavior when the constraints imposed by long-range periodicity are removed.
23#
發(fā)表于 2025-3-25 14:20:50 | 只看該作者
Electroreflectance and Raman Scattering Investigation of Glow-Discharge Amorphous Si:F:Hotostructural changes. In order to gain further information about the electronic and vibrational states of this amorphous semiconductor, we have investigated the electrolyte electroreflectance (EER) and Raman spectra of several samples of this material.
24#
發(fā)表于 2025-3-25 16:43:40 | 只看該作者
25#
發(fā)表于 2025-3-25 23:17:57 | 只看該作者
Reflectivity Studies of the Te(Ge,As)-Based Amorphous Semiconductor in the Conducting and Insulatingrned from these discussions to more material ends — that is to the design of materials which can be utilized for the basic differences between crystal and amorphous forms and, in particular, the differences in optical properties.
26#
發(fā)表于 2025-3-26 04:13:57 | 只看該作者
Three Dimensional Model of Structure and Electronic Properties of Chalcogenide Glassesorbital overlaps and bonding configurations of the lone pair electrons associated with the group VI chalcogen atoms which do not occur in crystals. We present the ‘ball and spoke’ models we have built to test out the concepts of lone pair relationships discussed earlier (Ovshinsky 1972, Ovshinsky 1973, Ovshinsky and Fritzsche 1973).
27#
發(fā)表于 2025-3-26 05:02:18 | 只看該作者
A New Amorphous Silicon-Based Alloy for Electronic Applicationspecially attractive in this regard because they are basically much less expensive than their crystalline counterparts and because they possess a direct band gap with a high value for the optical absorption coefficient. We report here the development of a new alloy that eliminates the physical problems associated with the silicon-hydrogen alloys.
28#
發(fā)表于 2025-3-26 09:21:30 | 只看該作者
29#
發(fā)表于 2025-3-26 14:57:12 | 只看該作者
30#
發(fā)表于 2025-3-26 18:56:28 | 只看該作者
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