Titlebook: Crucial Issues in Semiconductor Materials and Processing Technologies; S. Coffa,F. Priolo,J. M. Poate Book 1992 Springer Science+Business

DAMN

Silicon and Silicon:Germanium Alloy Growth; Means and Applications revolution in the properties attainable in devices fabricated using these new growth techniques. This paper will present several key advances in materials preparation, and the application of this work.

HPA533

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Effects of Near-Interface Defects on the Optical Properties of MBE Grown GaAs/AlGaAs Layersnce. Under certain excitation conditions strong interwell effects appear, in spite of the thick barriers. These effects seem to be attributable to interface and near-interface defects located in the MBE-grown AlGaAs barriers.

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Optoelectronic Materialsls. Since the ternary and quaternary alloys play a major part in the topic, we focus on specific issues, especially in terms of thermodynamics, related to alloys. An insight is given on recent developments: strained epilayers and quantum wells. We then review the materials of interest for optoelectr