Titlebook: Compact Transistor Modelling for Circuit Design; Henk C. Graaff,Fran?ois M. Klaassen Book 1990 Springer-Verlag/Wien 1990 SPICE.circuit.cir

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Glaube, Werte und Soziales Lernen,evice is mainly characterized by the lateral dimensions of the junctions in bipolar transistors and by the channel length and width in MOS transistors. The dimensions must be known in silicon because only the real dimensions are electrically significant. They are determined by the dimensions of the

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少量

,Was passiert, wenn ?nichts passiert“?,that usually not all compact model parameters are independent from each other: the value given to one parameter may influence the value of another. The final judgement whether a parameter set is good enough lies in the fit to the measurements and in their physical plausibility.

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Models for the Enhancement-Type MOSFET, will be followed by a discussion of models for short-channel devices, in which a number of corresponding effects, like threshold voltage lowering etc., are taken into account. Since MOSFETs are also employed nowadays in analog circuitry, we finally discuss modelling for this more demanding application.

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Parameter Determination,that usually not all compact model parameters are independent from each other: the value given to one parameter may influence the value of another. The final judgement whether a parameter set is good enough lies in the fit to the measurements and in their physical plausibility.

Prologue

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0179-0307 fective synergy of technological discoveries and physical understanding. Through physical reasoning, a feeling for the right assumption and the correct interpretation of experimental findings, a small group of pioneers conceived the major analytic design equations, which are currently to be found in