Titlebook: Cohesive Properties of Semiconductors under Laser Irradiation; Lucien D. Laude (Professor of Solid State Physics) Book 1983 Martinus Nijho

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Generation, Diffusion and Relaxation of Dense Plasmas in Semiconductors,equilibrium carrier dynamics and active nonlinearities in crystalline germanium at excitation levels approaching damage. An investigation of the dynamics of the Moss-Burstein shift of the absorption edge allows the identification of the onset of intervalence-band absorption, indicates a slow carrier

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Transient Optical Properties of Laser-Excited Si,ed for photon energies from 0.79 eV to 3.1 eV. The transmission through ~1μm thick silicon-on-sapphire (SOS) samples is ? 1% throughout this range. On ion-implantation-amorphized SOS the rapid rise in transmission which occurs in the 50–100 nsec following the high reflectivity phase can be used to e

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Time-Resolved Raman Studies of Laser-Excited Semiconductors, 1 J/cm.) laser pulse. In ion-implantation-amorphized Si the onset of recrystallization is clearly characterized by the appearance of a sharp Raman feature near 520 cm. well within the first 50 nsec. We find no Raman line during the laser-induced high reflectivity period in either crystalline or amo

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Ultrafast Phase Transitions in Silicon Induced by Picosecond Laser Interaction,the duration of a single picosecond pulse (~25ps). Complementary measurements of electron emission and charged particle emission demonstrate that the lattice is heated to the melting point even within the range of picoseconds. The phase transition can be entirely explained by simple thermal melting.

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Plasma Annealing and Laser Sputtering; Role of the Frenkel Exciton,tion is quite negligible. The same can be shown to be true for pulsed laser sputtering. By considering the non-thermal mechanisms by which laser irradiation causes atoms and ions to be sputtered from the surface, we may gain a better understanding of pulsed beam annealing. In particular, it is noted

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