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Titlebook: Bias Temperature Instability for Devices and Circuits; Tibor Grasser Book 2014 Springer Science+Business Media New York 2014 Metastable De

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發(fā)表于 2025-3-21 19:00:59 | 只看該作者 |倒序瀏覽 |閱讀模式
期刊全稱Bias Temperature Instability for Devices and Circuits
影響因子2023Tibor Grasser
視頻videohttp://file.papertrans.cn/186/185415/185415.mp4
發(fā)行地址Enables readers to understand and model negative bias temperature instability, with an emphasis on dynamics.Includes coverage of DC vs. AC stress, duty factor dependence and bias dependence.Explains t
圖書封面Titlebook: Bias Temperature Instability for Devices and Circuits;  Tibor Grasser Book 2014 Springer Science+Business Media New York 2014 Metastable De
影響因子This book provides a single-source reference to one of the more challenging reliability issues plaguing modern semiconductor technologies, negative bias temperature instability. Readers will benefit from state-of-the art coverage of research in topics such as time dependent defect spectroscopy, anomalous defect behavior, stochastic modeling with additional metastable states, multiphonon theory, compact modeling with RC ladders and implications on device reliability and lifetime.
Pindex Book 2014
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https://doi.org/10.1007/978-1-349-09706-7 present a microscopic formulation of the reaction–diffusion model based on the reaction–diffusion master equation and solve it using the stochastic simulation algorithm. The calculations are compared to the macroscopic version as well as established experimental data. The degradation predicted by t
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S. Mirel,S. Pop,E. Onaca,S. Domnita,V. Mirelpendent defects. Although the kinetics of charge capture and defect creation clearly require the presence of charge carriers in the channel, they appear reaction rather than diffusion limited. While a number of peculiar features in these kinetics have been revealed recently, the most striking featur
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Book 2014as temperature instability. Readers will benefit from state-of-the art coverage of research in topics such as time dependent defect spectroscopy, anomalous defect behavior, stochastic modeling with additional metastable states, multiphonon theory, compact modeling with RC ladders and implications on device reliability and lifetime.
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發(fā)表于 2025-3-22 23:49:42 | 只看該作者
Tibor GrasserEnables readers to understand and model negative bias temperature instability, with an emphasis on dynamics.Includes coverage of DC vs. AC stress, duty factor dependence and bias dependence.Explains t
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