Titlebook: Application of Particle and Laser Beams in Materials Technology; P. Misaelides Book 1995 Springer Science+Business Media Dordrecht 1995 Va

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Depth Profiling in Combination with Sputteringories. The first group comprises instruments which utilise the flux of sputtered particles for materials characterisation, the second employs surface sensitive techniques to determine the composition of the topmost layers at the sputter eroded surface. The technical and physical aspects of sputterin

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Experimental and Monte-Carlo Simulation Studies of the Surface Concentration Changes in ZrO2 under Icopy. It was shown that bombardment leads to a gradual build-up of an oxygen depletion layer that was described by its averaged composition and the in-depth distribution of the elemental concentration as a function of the ion dose. These parameters during the depth profiling process were simulated b

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The Raman Approach to Materials Scienceith emphasis on those concepts and techniques, which are relevant to material characterisation. Representative problems from current literature are discussed, including temperature, pressure, residual strain effects, crystal quality, lattice damage and recovery, and high-T. superconductivity.

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Laser-Material Interaction. Plasma Formation and Applicationssteps of the plasma formation are reviewed: initiation with primary electron production, surface material vaporisation and ionisation, breakdown in the ambient gas and plasma propagation. The influence of the laser wavelength, the material characteristics and the ambient gas nature is studied. Three

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Optical Spectrometry Coupled with Laser Ablation for Analytical Applications on Solidseric pressure inherent to the laser ablation (LA) techniques are of great interest for industrial applications, as they have the premises for becoming general, all-round and robust direct solid-sample analytical techniques. A general description of the laser ablation process, under conditions releva

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Laser Beam Probes for Semiconductor Processingng the processing of these materials for chip fabrication, we have developed and tested three techniques, which can be used at any pressure, and at temperatures between 300 and 500°C..Implementing the “Interferometric Technique”, we have used HeNe laser interferometry to follow the etching of Si, Ga

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Application of Particle and Laser Beams in Materials Technology978-94-015-8459-3Series ISSN 0168-132X

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