Titlebook: Advances in Optoelectronic Materials; Shadia Jamil Ikhmayies,Hatice Hilal Kurt Book 2021 Springer Nature Switzerland AG 2021 Optoelectroni

JOLT

書目名稱Advances in Optoelectronic Materials影響因子(影響力)




書目名稱Advances in Optoelectronic Materials影響因子(影響力)學科排名




書目名稱Advances in Optoelectronic Materials網(wǎng)絡(luò)公開度




書目名稱Advances in Optoelectronic Materials網(wǎng)絡(luò)公開度學科排名




書目名稱Advances in Optoelectronic Materials被引頻次




書目名稱Advances in Optoelectronic Materials被引頻次學科排名




書目名稱Advances in Optoelectronic Materials年度引用




書目名稱Advances in Optoelectronic Materials年度引用學科排名




書目名稱Advances in Optoelectronic Materials讀者反饋




書目名稱Advances in Optoelectronic Materials讀者反饋學科排名

Phenothiazines

Introduction to Digital Project Management elastic, lattice dynamic and optical properties of NaAlSi using . density-functional theory (DFT) within the generalized gradient approximation (GGA) for the exchange-correlation potential. The calculated lattice constants were in good agreement with the available data. Our band structure calculati

alabaster

Achieving Quality in Digital Projectsctronics. In that manner, the present chapter concerns with the optoelectronic characterization of some infrared-sensitive semiconductors to explore the physical parameters having great importance in the investigated structure. The optoelectronic properties of the III–V (GaAs and GaP)and II–VI (ZnSe

狼群

https://doi.org/10.1007/978-1-4302-0823-5In.S. phase, with no signature of secondary phases. The transmission coefficient is about 65–70% in the visible region and 70–90% in near-infrared region. The optical band gap values of In.S.:Sn for allowing direct transitions were found to be in the range 2.68–2.80?eV. The refractive index of In.S.

離開真充足

A Structural and Optical Look at Functional Materials,Overview:

audiologist

integrated

有權(quán)

挫敗

Charge Transport Mechanisms in the Silver-Modified Zeolite Porous Microstructure,Overview:

親屬

Physical Properties and Ethanol Response of Sprayed In2S3:Sn Films,Overview: