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Titlebook: Advances in Microelectronics, Embedded Systems and IoT; Proceedings of 8th I V. V. S. S. S Chakravarthy,Vikrant Bhateja,Anumoy Conference

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樓主: dejected
51#
發(fā)表于 2025-3-30 09:36:15 | 只看該作者
52#
發(fā)表于 2025-3-30 14:06:29 | 只看該作者
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54#
發(fā)表于 2025-3-31 00:04:29 | 只看該作者
55#
發(fā)表于 2025-3-31 01:04:48 | 只看該作者
https://doi.org/10.1007/978-3-540-24711-1ted in this paper to achieve high voltage gain. The circuit operation of different modes and different switching operations is analyzed. The mathematical analysis is obtained for different modes. The dual-loop control technique using PI controller is implemented, and proposed converter is examined b
56#
發(fā)表于 2025-3-31 08:55:31 | 只看該作者
Macroeconomic Policy and Collective Actionll Electric Vehicles (FCEVs). The study explores key components, specifications and topologies of the converters. The fuel cell is regulated using a fuel flow regulator, while Maximum Power Point Tracking (MPPT) controls the DC-DC converters, supplying PWM pulses. The converters step-up DC voltage f
57#
發(fā)表于 2025-3-31 11:15:37 | 只看該作者
Comments on R. Jackman and J. Papadachihome isolation setting. The study aims to evaluate the device‘s usability by comparing its vital sign measurements with clinical vital sign simulators and conducting trials with mild symptom COVID-19 patients. The PVS device successfully demonstrates a high level of agreement with the clinical vital
58#
發(fā)表于 2025-3-31 15:48:00 | 只看該作者
Comments on R. Jackman and J. Papadachie continual light and thermal stress as a result of the p-dopants and other additives in the HTLs. We created a model that uses reduced graphene oxide (rGO) as an HTL to enhance stability, and we used SCAPS-1D to analyse how efficiency changed when parameters were changed. The effect of perovskite l
59#
發(fā)表于 2025-3-31 17:56:52 | 只看該作者
California school finance: The 1970s decadenology will depend on the length of the channel between the source-drain terminals of a transistor. The proposed work depicts the design of Fully Depleted Silicon On Insulator FinFET with the channel doping concentration of 1?×?10.?cm. and the placing of dual-dielectric spacer combinations between s
60#
發(fā)表于 2025-3-31 23:50:38 | 只看該作者
California school finance: The 1970s decadeStructural analysis and phase identification were done with X-ray diffraction. Morphological analysis was carried out by field emission scanning electron microscope (FE-SEM). FE-SEM image shows that the grains are uniformly distributed over the surface. Also, the polycrystalline nature of the sample
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