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Titlebook: Why Math?; R. D. Driver Textbook 1984 Springer Science+Business Media New York 1984 Counting.Math.Mathematica.algebra.approximation.arithm

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發(fā)表于 2025-3-26 22:01:16 | 只看該作者
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發(fā)表于 2025-3-27 01:16:45 | 只看該作者
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發(fā)表于 2025-3-27 05:16:28 | 只看該作者
R. D. Driver states creating a strongly excited state; this is the intermediate state in scattering since it decays with a lower energy photon leaving behind the sample in an excited state. As a consequence, RIXS can give very detailed information on the elementary excitations of the sample in the absence of co
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發(fā)表于 2025-3-27 12:13:03 | 只看該作者
R. D. Drivercurrent literature for researchers and developers in human language technologies. While phrase-based models have previously dominated the field, syntax-based approaches have proved a popular alternative, as they elegantly solve many of the shortcomings of phrase-based models. The heart of this book
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發(fā)表于 2025-3-27 17:36:52 | 只看該作者
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Preparation and Characterization of Circulating Angiogenic Cells for Tissue Engineering Applicationipheral blood, bone marrow, and cord blood, and are one of the leading candidates for promoting vascularization in tissue engineering therapies. CACs can be isolated by culturing peripheral blood mononuclear cells (PBMCs) on fibronectin or by flow cytometry to obtain more specific subpopulations. He
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發(fā)表于 2025-3-28 02:28:58 | 只看該作者
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A Better Understanding of the Interaction Between Users and Items by Knowledge Graph Learning for Temporal Recommendationpresentation as characteristic information for addressing data sparsity and cold start issues. However, they ignore the implicit and explicit interaction between users and items, which may be gained by the relation extraction and knowledge reasoning, to lead to suboptimal performance. Thus, we belie
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發(fā)表于 2025-3-28 11:55:07 | 只看該作者
Hall Effect Studies of Electron Mobility and Trapping at the SiC/SiO2 Interfacermal conductivity. In addition, like silicon, SiC has a natural advantage for fabricating MOS devices because high quality SiO. for gate insulators can be thermally grown directly on the SiC in an oxidizing ambient. Despite these potential advantages, experimental SiC MOS devices today have poor per
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